Differences Between IGBT And MOSFET

MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor) are two types of transistors, and both of them belong to the gate driven category. Both devices have similar looking structures with different type of semiconductor layers.

Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

MOSFET is a type of Field Effect Transistor (FET), which is made of three terminals known as ‘Gate’, ‘Source’ and ‘Drain’. Here, drain current is controlled by the gate voltage. Therefore, MOSFETs are voltage controlled devices.

Insulated Gate Bipolar Transistor (IGBT)

IGBT is a semiconductor device with three terminals known as ‘Emitter’, ‘Collector’ and ‘Gate’. It is a type of transistor, which can handle a higher amount of power, and has a higher switching speed making it high efficient. IGBT was introduced to the market in 1980s

if we want to mention the differences  and features of (IGBT and Mosfet) ,there are a lot of items that we could name of them but the most important of them is climate

each of them(IGBT and Mosfet) are suitable for one type of climate, so according to variety of climate in our country ,Mosfet has best efficiency in our country,  while IGBT has a lot of advocates on other countries.

so because of this feature of Mosfet inverters, TANOS Tools Company imports inverters with Mosfet  feature to Iran market for doing the industrial works

Inverter of TANOS is usable for each climate